@article{oai:nagano-nct.repo.nii.ac.jp:00000451,
 author = {NAKAZAWA, Tatsuo and KURANOUCHI, Shin'ichi},
 journal = {長野工業高等専門学校紀要},
 month = {Aug},
 note = {application, Electrical and photovoltaic characteristics of n-In_2O_3/p-Cu_2O heterojunction thin film cells were investigated. Cu_2O semiconducting films were prepared by simple method of thermal oxidation of copper foil in air. Conversion efficiency of 0.57% was obtained under illumination of the sunlight. It is thought that a high series resistance of the diode, which originated from a interface between Cu_2O film and copper foil, causes the poor characteristics. Photovoltaic characteristics of the cell consisted of relative thick Cu_2O film was improved by a chemical etching for the surface of the film in bromine-methanol solution and a low temperature annealing at 550℃.},
 pages = {21--28},
 title = {Photovoltaic effect of n-In_2O_3/p-Cu_2O heterojunction thin film cells},
 volume = {25},
 year = {1992}
}