@article{oai:nagano-nct.repo.nii.ac.jp:00000470,
 author = {中澤, 達夫},
 journal = {長野工業高等専門学校紀要},
 month = {Aug},
 note = {application, Characteristics of quaternary stannite-type semiconductor thin films were investigated. These films were deposited on glass substrate by vacuum evaporation or by spray pyrolysis. A thermal treatment in H_2S flow was needed to obtain quaternary films. The optimum conditions for deposition and annealing were studied. Single phase stannite-type films with (112) orientation were obtained when the as-deposited films were annealed at 500℃ in H_2S atmosphere. The resistivity of the films were changed from 10^<-2>Ωcm to 10^3Ωcm with the change of the film composition.},
 pages = {25--32},
 title = {太陽電池用四元化合物半導体薄膜の堆積},
 volume = {23},
 year = {1991}
}