{"created":"2023-06-20T15:40:22.342736+00:00","id":470,"links":{},"metadata":{"_buckets":{"deposit":"19e08342-1eff-4ae1-bb69-fd56a7a5fdc1"},"_deposit":{"created_by":17,"id":"470","owners":[17],"pid":{"revision_id":0,"type":"depid","value":"470"},"status":"published"},"_oai":{"id":"oai:nagano-nct.repo.nii.ac.jp:00000470","sets":["3:37"]},"author_link":["1094"],"item_2_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"Deposition of quaternary semiconductor thin films for Solar cells"}]},"item_2_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1991-08-30","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"32","bibliographicPageStart":"25","bibliographicVolumeNumber":"23","bibliographic_titles":[{"bibliographic_title":"長野工業高等専門学校紀要"}]}]},"item_2_description_19":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application","subitem_description_type":"Other"}]},"item_2_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Characteristics of quaternary stannite-type semiconductor thin films were investigated. These films were deposited on glass substrate by vacuum evaporation or by spray pyrolysis. A thermal treatment in H_2S flow was needed to obtain quaternary films. The optimum conditions for deposition and annealing were studied. Single phase stannite-type films with (112) orientation were obtained when the as-deposited films were annealed at 500℃ in H_2S atmosphere. The resistivity of the films were changed from 10^<-2>Ωcm to 10^3Ωcm with the change of the film composition.","subitem_description_type":"Abstract"}]},"item_2_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"長野工業高等専門学校"}]},"item_2_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN00179170","subitem_source_identifier_type":"NCID"}]},"item_2_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0286-1909","subitem_source_identifier_type":"ISSN"}]},"item_2_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"中澤, 達夫"}],"nameIdentifiers":[{"nameIdentifier":"1094","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2013-02-19"}],"displaytype":"detail","filename":"nagano_nct-23-04.pdf","filesize":[{"value":"432.1 kB"}],"format":"application/pdf","licensetype":"license_11","mimetype":"application/pdf","url":{"label":"nagano_nct-23-04.pdf","url":"https://nagano-nct.repo.nii.ac.jp/record/470/files/nagano_nct-23-04.pdf"},"version_id":"989a6cba-8dd7-4782-94eb-bc6e3bdb0887"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"太陽電池用四元化合物半導体薄膜の堆積","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"太陽電池用四元化合物半導体薄膜の堆積"}]},"item_type_id":"2","owner":"17","path":["37"],"pubdate":{"attribute_name":"公開日","attribute_value":"2013-02-19"},"publish_date":"2013-02-19","publish_status":"0","recid":"470","relation_version_is_last":true,"title":["太陽電池用四元化合物半導体薄膜の堆積"],"weko_creator_id":"17","weko_shared_id":-1},"updated":"2023-06-20T16:07:00.348486+00:00"}