@article{oai:nagano-nct.repo.nii.ac.jp:00000650,
 author = {松島, 久夫},
 journal = {長野工業高等専門学校紀要},
 month = {Dec},
 note = {application, The study of thermoelectoric device has a long history and has a comprehensive field of application. This paper describes the thermoelectric characteristic of PbTe thin films produded by the physical vapor deposition method. The experimental results are summarized as follows. Compared with the thermoelectromotive force of PbTe, that of metal thermocouple is smaller. The p-type PbTe changes to the n-type PbTe with the substraite temperature around 200℃. The thermoelectric characteristic can be controlled by the composition of Pb and Te.},
 pages = {45--50},
 title = {PbTe薄膜の作成と温度特性},
 volume = {19},
 year = {1988}
}