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Photovoltaic effect of n-In_2O_3/p-Cu_2O heterojunction thin film cells
https://nagano-nct.repo.nii.ac.jp/records/451
https://nagano-nct.repo.nii.ac.jp/records/4510034fabe-a225-45ea-9a56-a7468e4eacee
名前 / ファイル | ライセンス | アクション |
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nagano_nct-25-03.pdf (374.6 kB)
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Item type | Departmental Bulletin Paper(1) | |||||
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公開日 | 2013-02-19 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Photovoltaic effect of n-In_2O_3/p-Cu_2O heterojunction thin film cells | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | departmental bulletin paper | |||||
著者 |
NAKAZAWA, Tatsuo
× NAKAZAWA, Tatsuo× KURANOUCHI, Shin'ichi |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Electrical and photovoltaic characteristics of n-In_2O_3/p-Cu_2O heterojunction thin film cells were investigated. Cu_2O semiconducting films were prepared by simple method of thermal oxidation of copper foil in air. Conversion efficiency of 0.57% was obtained under illumination of the sunlight. It is thought that a high series resistance of the diode, which originated from a interface between Cu_2O film and copper foil, causes the poor characteristics. Photovoltaic characteristics of the cell consisted of relative thick Cu_2O film was improved by a chemical etching for the surface of the film in bromine-methanol solution and a low temperature annealing at 550℃. | |||||
書誌情報 |
長野工業高等専門学校紀要 巻 25, p. 21-28, 発行日 1992-08-31 |
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出版者 | ||||||
出版者 | 長野工業高等専門学校 | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0286-1909 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AN00179170 | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 |