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Photovoltaic effect of n-In_2O_3/p-Cu_2O heterojunction thin film cells
https://nagano-nct.repo.nii.ac.jp/records/451
https://nagano-nct.repo.nii.ac.jp/records/4510034fabe-a225-45ea-9a56-a7468e4eacee
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
nagano_nct-25-03.pdf (374.6 kB)
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| Item type | Departmental Bulletin Paper(1) | |||||
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| 公開日 | 2013-02-19 | |||||
| タイトル | ||||||
| タイトル | Photovoltaic effect of n-In_2O_3/p-Cu_2O heterojunction thin film cells | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | departmental bulletin paper | |||||
| 著者 |
NAKAZAWA, Tatsuo
× NAKAZAWA, Tatsuo× KURANOUCHI, Shin'ichi |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Electrical and photovoltaic characteristics of n-In_2O_3/p-Cu_2O heterojunction thin film cells were investigated. Cu_2O semiconducting films were prepared by simple method of thermal oxidation of copper foil in air. Conversion efficiency of 0.57% was obtained under illumination of the sunlight. It is thought that a high series resistance of the diode, which originated from a interface between Cu_2O film and copper foil, causes the poor characteristics. Photovoltaic characteristics of the cell consisted of relative thick Cu_2O film was improved by a chemical etching for the surface of the film in bromine-methanol solution and a low temperature annealing at 550℃. | |||||
| 書誌情報 |
長野工業高等専門学校紀要 巻 25, p. 21-28, 発行日 1992-08-31 |
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| 出版者 | ||||||
| 出版者 | 長野工業高等専門学校 | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0286-1909 | |||||
| 書誌レコードID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AN00179170 | |||||
| フォーマット | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | application | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
