Electrical and photovoltaic characteristics of n-In_2O_3/p-Cu_2O heterojunction thin film cells were investigated. Cu_2O semiconducting films were prepared by simple method of thermal oxidation of copper foil in air. Conversion efficiency of 0.57% was obtained under illumination of the sunlight. It is thought that a high series resistance of the diode, which originated from a interface between Cu_2O film and copper foil, causes the poor characteristics. Photovoltaic characteristics of the cell consisted of relative thick Cu_2O film was improved by a chemical etching for the surface of the film in bromine-methanol solution and a low temperature annealing at 550℃.
Photovoltaic effect of n-In_2O_3/p-Cu_2O heterojunction thin film cells
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nagano_nct-25-03.pdf
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