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太陽電池用四元化合物半導体薄膜の堆積
https://nagano-nct.repo.nii.ac.jp/records/470
https://nagano-nct.repo.nii.ac.jp/records/470fafac2fe-72d9-40cb-81aa-4cb0e39fb7cf
名前 / ファイル | ライセンス | アクション |
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nagano_nct-23-04.pdf (432.1 kB)
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Item type | Departmental Bulletin Paper(1) | |||||
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公開日 | 2013-02-19 | |||||
タイトル | ||||||
タイトル | 太陽電池用四元化合物半導体薄膜の堆積 | |||||
言語 | ||||||
言語 | jpn | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | departmental bulletin paper | |||||
その他(別言語等)のタイトル | ||||||
その他のタイトル | Deposition of quaternary semiconductor thin films for Solar cells | |||||
著者 |
中澤, 達夫
× 中澤, 達夫 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Characteristics of quaternary stannite-type semiconductor thin films were investigated. These films were deposited on glass substrate by vacuum evaporation or by spray pyrolysis. A thermal treatment in H_2S flow was needed to obtain quaternary films. The optimum conditions for deposition and annealing were studied. Single phase stannite-type films with (112) orientation were obtained when the as-deposited films were annealed at 500℃ in H_2S atmosphere. The resistivity of the films were changed from 10^<-2>Ωcm to 10^3Ωcm with the change of the film composition. | |||||
書誌情報 |
長野工業高等専門学校紀要 巻 23, p. 25-32, 発行日 1991-08-30 |
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出版者 | ||||||
出版者 | 長野工業高等専門学校 | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0286-1909 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AN00179170 | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 |