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アイテム
太陽電池用四元化合物半導体薄膜の堆積
https://nagano-nct.repo.nii.ac.jp/records/470
https://nagano-nct.repo.nii.ac.jp/records/470fafac2fe-72d9-40cb-81aa-4cb0e39fb7cf
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
nagano_nct-23-04.pdf (432.1 kB)
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| アイテムタイプ | Departmental Bulletin Paper(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2013-02-19 | |||||
| タイトル | ||||||
| タイトル | 太陽電池用四元化合物半導体薄膜の堆積 | |||||
| 言語 | ||||||
| 言語 | jpn | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | departmental bulletin paper | |||||
| その他（別言語等）のタイトル | ||||||
| その他のタイトル | Deposition of quaternary semiconductor thin films for Solar cells | |||||
| 著者 |
中澤, 達夫
× 中澤, 達夫 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Characteristics of quaternary stannite-type semiconductor thin films were investigated. These films were deposited on glass substrate by vacuum evaporation or by spray pyrolysis. A thermal treatment in H_2S flow was needed to obtain quaternary films. The optimum conditions for deposition and annealing were studied. Single phase stannite-type films with (112) orientation were obtained when the as-deposited films were annealed at 500℃ in H_2S atmosphere. The resistivity of the films were changed from 10^<-2>Ωcm to 10^3Ωcm with the change of the film composition. | |||||
| 書誌情報 |
長野工業高等専門学校紀要 巻 23, p. 25-32, 発行日 1991-08-30 |
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| 出版者 | ||||||
| 出版者 | 長野工業高等専門学校 | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0286-1909 | |||||
| 書誌レコードID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AN00179170 | |||||
| フォーマット | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | application | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
